MCH3475
0 μ
1m
10
DC
s
op
0m
a i t
a=
25
° C
10
9
8
7
6
5
4
3
2
1
0
VDS=10V
ID=1.8A
VGS -- Qg
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
ASO
IDP=7.2A(PW≤10μs)
10
ID=1.8A s
m
10
er s
on
(T
Operation in this )
area is limited by RDS(on).
Ta=25 ° C
Single pulse
When mounted on ceramic substrate (900mm 2 ? 0.8mm)
s
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
5
1.0
Total Gate Charge, Qg -- nC
PD -- Ta
IT13115
Drain to Source Voltage, VDS -- V
IT13116
nm
? 0
mm
0.8
0.6
0.4
0.2
W
he
ou
nte
do
nc
era
mi
cs
ub
str
ate
(90
0m
m 2
.8
)
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- ° C
IT13117
No. A1000-4/6
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